Advanced Physical Models for Silicon Device Simulation by Andreas Schenk

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By Andreas Schenk

Device simulation has major reasons: to appreciate and depict the actual methods within the inside of a tool, and to make trustworthy predictions of the habit of an expected new machine new release. in the direction of those pursuits the standard of the actual versions is decisive. The introductory bankruptcy of this ebook encompasses a severe overview on types for silicon machine simulators, which depend upon moments of the Boltzmann equation. with regards to primary experimental and theoretical paintings an intensive selection of well-known types is mentioned by way of actual accuracy and alertness effects. This overview indicates that the standard and potency of the phys­ ical types, that have been constructed for the aim of numerical simulation during the last 3 a long time, is enough for plenty of functions. however, the fundamental realizing of the microscopic methods, in addition to the individuality and accuracy of the types are nonetheless unsatisfactory. accordingly, the subsequent chapters of the ebook care for the derivation of physics-based versions from a microscopic point, additionally utilizing new methods of "taylored quantum-mechanics". every one version is in comparison with experimental information and utilized to a few simulation examination­ ples. the issues whilst ranging from "first rules" and making the types appropriate for a tool simulator may also be verified. we'll exhibit that calls for for speedy computation and numerical robustness require a compromise among actual soundness and analytical simplicity, and that the possible accuracy is proscribed through the complexity of the problems.

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49] are based on the HD model and the ET model, respectively. 26] is a one-dimensional implementation of the HD model which includes lattice heating effects. Fig. 1 gives a summary of the above described transport models. 260]. The constant energy surfaces are cigar-shaped ellipsoids leading to a large difference between transverse and longitudinal effective masses. 204]. 103]). Together with experimental data of Ousset et al. 214] the temperature dependence of the transverse effective mass was deduced.

In contrast, extensive measurements by the field effect capacitance technique coupled with field effect conductance experiments by Leistiko et al. 167] revealed a constant inversion layer mobility for both electrons and holes up to a total charge density per unit area of about 1012 cm- 2 at room temperature. Beyond this density the mobilities decreased, but much slower than predicted by Schrieffer's theory. 223] repeated the calculation, avoiding the constant field approximation and obtained better agreement with experimental data.

83 nb1/3 -rs + rs3/4 + Rma] ( Rmin) 1 + --. 57 1/3 3/2 . 69) Here Rmaj,min denote the effective Rydberg energy of the majority or minority band, respectively, and rs is the density parameter defined in Eq. 65). 3. 25 >' ~ -_. L---'-----' 16 17 18 19 20 Log( Doping Concentration [cm·3] 21 ) Fig. 4 Comparison of different theoretical BGN models based on calculations of the rigid shifts of the band edges. References are given in the text. 3 together with the effective masses used. 69) contains the four major contributions to BGN; (1) the shift of the majority band edge due to exchange interaction; (2) the shift of the minority band edge due to electron-hole interaction; (3) the shift of the majority band edge due to carrier-impurity interactions; and (4) the shift of the minority band edge due to carrier-impurity interactions.

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